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[url=http://www.utsource.net/ic-datasheet/2N4033-322344.html]2N4033[/url] datasheet
2N4033 transistor
2N4033 equivalent
2N4033 spice
MECHANICAL DATA
Dimensions in mm (inches)
HIGH SPEED MEDIUM VOLTAGE SWITCH
8. 8 9 (0. 3 5)
9. 4 0 (0. 3 7)
7. 7 5 (0. 305)
8. 5 1 (0. 335)
5. 0 8 (0. 200)
4. 1 9 (0. 165)
4. 9 5 (0. 195)
12. 70 (0 . 5 0 0 ) mi n .
0. 89 max . (0 . 0 35 )
7. 7 5 (0. 305)
8. 5 1 (0. 335)
0. 6 6 (0. 026)
1. 1 4 (0. 045)
0. 7 1 (0. 028)
0. 8 6 (0. 034)
2. 54 (0 . 1 0 0 )
DESCRIPTION
The 2N4033 is a silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications.
Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector
ABSOLUTE MAXIMUM RATINGS Tcase = 25°c unless otherwise stated
VCEO Collector – Emitter Voltage VCBO Collector – Base Voltage VEBO Emitter – Base Voltage
IC Continuous Collector Current
PD Total Device Dissipation at TA  25°C Derate above 25°C
PD Total Device Dissipation at TC  25°C Derate above 25°C
4.56 mW/°C
22.8mW/°C
Tstg Operating and Storage Temperature Range
–65 to +200°C
THERMAL CHARATERISTICS
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter Test Conditions Min. Typ. Max. Unit
ICBO IEBO VCE(sat) VBE(sat)
VBE(on)
V(BR)CEO V(BR)CBO V(BR)EBO
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage1
Base Emitter Saturation Voltage1
Base Emitter on Voltage
Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage
DC Current Gain
�VCB = -60V TA = 150°C VEB = -5V
IC = -150mA IB = -15mA IC = -500mA IB = -50mA IC = -150mA IB = -15mA
IC = -500mA VCE = -0.5V1
IC = -10mA IC = -10ï�A IE = -10ï�A
IC = -100mA VCE = -5.0V
@-55°C1
IC = -100ï�A VCE = -5.0V
�-50 nA
-1.1 V V V V
SMALL SIGNAL CHARACTERISTICS
�IC = -100mA VCE = -5.0V1
IC = -500mA VCE = -5.0V1
IC = -1.0A VCE = -5.0V1
�100 300
�Output Capacitance
Input Capacitance
Small Signal Gain
�VCE = -10V f = 1MHz
VEB = -0.5V f = 1MHz
IC = -50mA VCE = -10V
f = 100MHz
1.5 5.0 —
SWITCHING CHARACTERISTICS
�Turn On Time
Fall Time
Storage Time
IC = -500mA IB1=-IB2 = -50mA
1Pulse test tp = 300ï�s , ï�¤ = 1%